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Zh. Vychisl. Mat. Mat. Fiz., 2009, Volume 49, Number 8, Pages 1517–1530 (Mi zvmmf4744)  

This article is cited in 3 scientific papers (total in 3 papers)

Computer simulation of stable structures in crystal substances

K. K. Abgaryan, V. R. Khachaturov

Dorodnicyn Computing Center, Russian Academy of Sciences, ul. Vavilova 40, Moscow, 119333, Russia

Abstract: Mathematical methods and algorithms used to design an automated system for predicting the properties of substances with a given crystal-chemical formula are described.

Key words: computer simulation, optimization methods, ystal structures, stability, mathematical models, computational algorithms.

Full text: PDF file (2118 kB)
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English version:
Computational Mathematics and Mathematical Physics, 2009, 49:8, 1449–1462

Bibliographic databases:

UDC: 519.677
Received: 02.06.2008
Revised: 06.03.2009

Citation: K. K. Abgaryan, V. R. Khachaturov, “Computer simulation of stable structures in crystal substances”, Zh. Vychisl. Mat. Mat. Fiz., 49:8 (2009), 1517–1530; Comput. Math. Math. Phys., 49:8 (2009), 1449–1462

Citation in format AMSBIB
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\paper Computer simulation of stable structures in crystal substances
\jour Zh. Vychisl. Mat. Mat. Fiz.
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\issue 8
\pages 1517--1530
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\transl
\jour Comput. Math. Math. Phys.
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\vol 49
\issue 8
\pages 1449--1462
\crossref{https://doi.org/10.1134/S0965542509080156}
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\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-70350593786}


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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. Abgaryan K.K., Bazhanov D.I., Kholomeeva A.A., “Prognozirovanie plotnosti elektronnykh sostoyanii nekotorykh perovskitopodobnykh struktur na primere CaTiO$_3$”, Vestn. Mosk. aviatsionnogo in-ta, 16:6 (2009), 199–203
    2. Abgaryan K., Mutigullin I., Bazhanov D., “Multiscale Computational Model of Nitride Semiconductor Nanostructures”, Material Sciences and Technology, Pts 1 & 2, Advanced Materials Research, 560-561, ed. Li Y., Trans Tech Publications Ltd, 2012, 1133–1137  crossref  isi  scopus
    3. K. K. Abgaryan, D. L. Reviznikov, “Numerical simulation of the distribution of charge carrier in nanosized semiconductor heterostructures with account for polarization effects”, Comput. Math. Math. Phys., 56:1 (2016), 161–172  mathnet  crossref  crossref  isi  elib
  • Журнал вычислительной математики и математической физики Computational Mathematics and Mathematical Physics
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