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Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
Address: Russia, 630090, Novosibirsk, Ac. Lavrentiev Ave, 13
Phone: +7 (383) 333 27 66
Fax: +7 (383) 333 27 71
E-mail:
Website: http://www.isp.nsc.ru
Number of persons: 266
Number of authors: 319
Number of publications: 518

Personnel: A B C D E F G I K L M N O P R S T U V Y Z
full list
  • Bakarov, Askhat Klimovich
  • Bakin, Vasilii Veniaminovich
  • Baksheev, Dmitrii Georgievich
  • Balakirev, Mikhail Konstantinovich
  • Balandin, V Yu
  • Basalaeva, Lyudmila Sergeevna
  • Batsanov, Stepan Anatol'evich
  • Baturina, Tat'yana I
  • Batyev, Èduard Gazizovich
  • Belinicher, Viktor Iosifovich
  • Bel'skaya, Ekaterina Viktorovna
  • Beterov, Il'ya Igorevich
  • Blokh, M D
  • Bloshkin, A A
  • Boev, Maksim Vadimovich
  • Bokhan, Petr Artemovich
  • Bolkhovityanov, Yurii Borisovich
  • Braginskii, L S
  • Budamykh, Viktor Ivanovich
  • Budantsev, Maksim Vladimirovich
  • Burdastykh, Mariya Vladimirovna
  • Bykov, Aleksei Aleksandrovich



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    Other institution names:
    • Institute of Semiconductor Physics of USSR Academy of Sciences, Siberian Branch
     
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