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Pchelyakov, Oleg Petrovich

Statistics Math-Net.Ru
Total publications: 7
Scientific articles: 7

Number of views:
This page:281
Abstract pages:2039
Full texts:440
References:179
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Website: http://lib.isp.nsc.ru/16/index_r.html

http://www.mathnet.ru/eng/person44854
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List of publications on ZentralBlatt

Publications in Math-Net.Ru
2008
1. Yu. B. Bolkhovityanov, O. P. Pchelyakov, “GaAs epitaxy on Si substrates: modern status of research and engineering”, UFN, 178:5 (2008),  459–480  mathnet; Phys. Usp., 51:5 (2008), 437–456  isi  scopus
2005
2. D. V. Gritsenko, S. S. Shaimeev, M. A. Lamin, O. P. Pchelyakov, V. A. Gritsenko, V. G. Lifshits, “Two-band conductivity of ZrO<sub>2</sub> synthesized by molecular beam epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:11 (2005),  721–723  mathnet; JETP Letters, 81:11 (2005), 587–589  isi  scopus
3. D. A. Orekhov, V. A. Volodin, M. D. Efremov, A. I. Nikiforov, V. V. Ul'yanov, O. P. Pchelyakov, “Phonon localization in Ge nanoislands and its manifestation in Raman spectra”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:7 (2005),  415–418  mathnet; JETP Letters, 81:7 (2005), 331–334  isi  scopus
4. A. G. Milekhin, A. I. Nikiforov, O. P. Pchelyakov, A. G. Rodrigues, J. C. Galzerani, D. R. T. Zahn, “Resonant Raman scattering in GeSi/Si superlattices with GeSi quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:1 (2005),  33–36  mathnet; JETP Letters, 81:1 (2005), 30–33  isi  scopus
2001
5. A. G. Milekhin, A. I. Nikiforov, O. P. Pchelyakov, Sh. Shul'tse, D. R. T. Tsan, “Phonons in Ge/Si superlattices with Ge quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:9 (2001),  521–525  mathnet; JETP Letters, 73:9 (2001), 461–464  scopus
6. Yu. B. Bolkhovityanov, O. P. Pchelyakov, S. I. Chikichev, “Silicon – germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures”, UFN, 171:7 (2001),  689–715  mathnet; Phys. Usp., 44:7 (2001), 655–680  isi
2000
7. O. P. Pchelyakov, “Molecular beam epitaxy: equipment, devices, technology”, UFN, 170:9 (2000),  993–995  mathnet; Phys. Usp., 43:9 (2000), 923–925  isi

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