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Andrianov, D G

Statistics Math-Net.Ru
Total publications: 5
Scientific articles: 5

Number of views:
This page:58
Abstract pages:470
Full texts:178
References:79

http://www.mathnet.ru/eng/person71028
List of publications on Google Scholar
List of publications on ZentralBlatt

Publications in Math-Net.Ru
2004
1. T. N. Mamedov, D. Andreica, D. G. Andrianov, D. Herlach, V. N. Gorelkin, K. I. Gritsaj, V. A. Zhukov, A. V. Stoikov, U. Zimmermann, “The effect of uniaxial static pressure on the behavior of an aluminum acceptor impurity in silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:5 (2004),  385–388  mathnet; JETP Letters, 80:5 (2004), 339–342  scopus
2. T. N. Mamedov, D. G. Andrianov, D. Herlach, V. N. Gorelkin, A. V. Stoikov, U. Zimmermann, “Ionization mechanisms of aluminum acceptor impurity in silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:1 (2004),  25–29  mathnet; JETP Letters, 79:1 (2004), 21–24  scopus
2002
3. T. N. Mamedov, D. G. Andrianov, D. Herlach, V. N. Gorelkin, A. V. Stoikov, U. Zimmermann, “Interactions of $_\mu$Al acceptor impurity in weakly and heavily doped silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:7 (2002),  515–519  mathnet; JETP Letters, 76:7 (2002), 440–443  scopus
2001
4. T. N. Mamedov, D. G. Andrianov, D. Herlach, V. N. Gorelkin, K. I. Gritsaj, V. N. Duginov, O. Kormann, J. Major, A. V. Stoikov, U. Zimmermann, “Magnetic moment relaxation of a shallow acceptor center in heavily doped silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:12 (2001),  759–762  mathnet; JETP Letters, 73:12 (2001), 674–677  scopus
1960
5. V. I. Fistul, D. G. Andrianov, “Adsorption-produced changes in the surface conductivity of germanium”, Dokl. Akad. Nauk SSSR, 130:2 (1960),  374–376  mathnet

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