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Quantum physics and quantum information
June 2, 2015 11:00, Moscow
 


Resonant tunnel amplification of plasmons in Van der Waals heterostructures

D.A. Svintsovab

a Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
b Insitute of Physics and Technology, Russian Academy of Sciences, Moscow
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Abstract: Heterostructures based on parallel graphene layers separated by thin dielectrics are among the main components of the novel electronic devices: optical and plasmon modulators, transistors and photodetectors. Thin dielectric layers ( 3 nm) enable the resonant tunneling of electrons between the graphene sheets. In the report, it is shown that a double graphene layer tunneling structure can play a role of a gain medium for plasmons, simiar to the quantum cascade lasers based on superlattices. Plasmon gain coefficient is shown to exceed the loss associated with the interband and intraband transitions in graphene. The frequency dependence of plasmon gain coefficient exhibits a resonance attributed to the strong interaction between electrons with parallel momenta in graphene layers.

Materials: svintsov_june_02_2015.pdf (2.3 Mb)

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