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Computational nanotechnology, 2018, Issue 2, Pages 83–90
(Mi cn191)
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05.14.00. POWER
05.14.08 POWER STATIONS ON THE BASIS RENEWABLE ENERGY
Investigation of modified photodiode structures with interlaced transitions for optical power loss meter
D. M. Yodgorovaa, F. A. Giyasovaa, R. G. Zakirovb a Phisical-technical institute «Phisics-Sun», Uzbekistan
b «Uzbekistan Airways technics» aircraft maintenance center
Abstract:
This paper present the results of an experimental data investigation of the optical-electrical characteristics of a twobarrier photodiode Ag-NGaAs-nGaInAs-Ag-structure with an isotype heterojunction as a receiver of optical signals and an estimate of its photoelectric amplification coefficient was made. Possibility of using of investigated photodiode structures in optical power loss meters are also described.
Keywords:
optical signal, photosensitivity, phototransistor, photodiode structure, semiconductor, metal-semiconductor, twin-barrier, power, geteronransition, optical characteristics.
Citation:
D. M. Yodgorova, F. A. Giyasova, R. G. Zakirov, “Investigation of modified photodiode structures with interlaced transitions for optical power loss meter”, Comp. nanotechnol., 2018, no. 2, 83–90
Linking options:
https://www.mathnet.ru/eng/cn191 https://www.mathnet.ru/eng/cn/y2018/i2/p83
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