Doklady Akademii Nauk SSSR
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Dokl. Akad. Nauk:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Doklady Akademii Nauk SSSR, 1968, Volume 181, Number 1, Pages 46–48 (Mi dan33962)  
PHYSICS

Possible mechanism behind the formation of complex radiation defects in silicon, produced by electronic irradiation

S. M. Gorodetskii, L. B. Kreinin

Institute of Semiconductors of the USSR Academy of Sciences
Full-text PDF (420 kB)
Presented: B. P. Konstantinov
Received: 16.10.1967
Document Type: Article
UDC: 537.311.33:539.124.28
Language: Russian
Citation: S. M. Gorodetskii, L. B. Kreinin, “Possible mechanism behind the formation of complex radiation defects in silicon, produced by electronic irradiation”, Dokl. Akad. Nauk SSSR, 181:1 (1968), 46–48
Citation in format AMSBIB
\Bibitem{GorKre68}
\by S.~M.~Gorodetskii, L.~B.~Kreinin
\paper Possible mechanism behind the formation of complex radiation defects in silicon, produced by electronic irradiation
\jour Dokl. Akad. Nauk SSSR
\yr 1968
\vol 181
\issue 1
\pages 46--48
\mathnet{http://mi.mathnet.ru/dan33962}
Linking options:
  • https://www.mathnet.ru/eng/dan33962
  • https://www.mathnet.ru/eng/dan/v181/i1/p46
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Statistics & downloads:
    Abstract page:155
    Full-text PDF :71
    References:5
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025