Doklady Akademii Nauk SSSR
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Dokl. Akad. Nauk:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Doklady Akademii Nauk SSSR, 1978, Volume 240, Number 5, Pages 1108–1110 (Mi dan41792)  
CRYSTALLOGRAPHY

Effect of excess silicon on the formation of $\alpha$-$\mathrm{Si}_3\mathrm{N}_4$ in the ionic implantation of nitrogen

P. V. Pavlov

Gorky Research Institute of Physics and Technology, Gorky State University
Full-text PDF (437 kB)
Presented: N. V. Belov
Received: 06.03.1978
Document Type: Article
UDC: 539.1.043+539.213+539.27
Language: Russian
Citation: P. V. Pavlov, “Effect of excess silicon on the formation of $\alpha$-$\mathrm{Si}_3\mathrm{N}_4$ in the ionic implantation of nitrogen”, Dokl. Akad. Nauk SSSR, 240:5 (1978), 1108–1110
Citation in format AMSBIB
\Bibitem{Pav78}
\by P.~V.~Pavlov
\paper Effect of excess silicon on the formation of $\alpha$-$\mathrm{Si}_3\mathrm{N}_4$ in the ionic implantation of nitrogen
\jour Dokl. Akad. Nauk SSSR
\yr 1978
\vol 240
\issue 5
\pages 1108--1110
\mathnet{http://mi.mathnet.ru/dan41792}
Linking options:
  • https://www.mathnet.ru/eng/dan41792
  • https://www.mathnet.ru/eng/dan/v240/i5/p1108
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025