N. N. Sirota, A. A. Sidorov, “Temperature dependence of the intensity of diffraction maxima in roentgenograms of semiconductor compounds $\mathrm{GaAs}$, $\mathrm{InAs}$, $\mathrm{InP}$ in the $7$–$310$ K temperature range”, Dokl. Akad. Nauk SSSR, 280:2 (1985), 352

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Doklady Akademii Nauk SSSR, 1985, Volume 280, Number 2, Pages 352–356 (Mi dan46864)

PHYSICS

Temperature dependence of the intensity of diffraction maxima in roentgenograms of semiconductor compounds $\mathrm{GaAs}$, $\mathrm{InAs}$, $\mathrm{InP}$ in the $7$–$310$ K temperature range

N. N. Sirota^a, A. A. Sidorov^b

^a Moscow Institute of Irrigation
^b I. G. Petrovsky Bryansk State Pedagogical Institute

Full-text PDF (661 kB)

Received: 20.04.1984

Document Type: Article

UDC: 548.732

Language: Russian

Citation: N. N. Sirota, A. A. Sidorov, “Temperature dependence of the intensity of diffraction maxima in roentgenograms of semiconductor compounds $\mathrm{GaAs}$, $\mathrm{InAs}$, $\mathrm{InP}$ in the $7$–$310$ K temperature range”, Dokl. Akad. Nauk SSSR, 280:2 (1985), 352–356

Citation in format AMSBIB

\Bibitem{SirSid85}

\by N.~N.~Sirota, A.~A.~Sidorov

\paper Temperature dependence of the intensity of diffraction maxima in roentgenograms

of semiconductor compounds $\mathrm{GaAs}$, $\mathrm{InAs}$, $\mathrm{InP}$ in the $7$--$310$~K temperature range

\jour Dokl. Akad. Nauk SSSR

\yr 1985

\vol 280

\issue 2

\pages 352--356

\mathnet{http://mi.mathnet.ru/dan46864}

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https://www.mathnet.ru/eng/dan/v280/i2/p352

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