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Doklady Akademii Nauk SSSR, 1988, Volume 299, Number 2, Pages 358–362 (Mi dan48228)  
PHYSICS

The ionization-enhanced defect production in dioped silicon

P. Kh. Khabibullaev, S. N. Abdurakhmanova, M. A. Zaikovskaya, Kh. Kh. Mannanova, B. L. Oksengendler, M. S. Yunusov

Institute for Nuclear Physics of Uzbekistan Academy of Sciences, Tashkent
Full-text PDF (362 kB)
Received: 03.09.1987
Document Type: Article
UDC: 537.5:621.315.592
Language: Russian
Citation: P. Kh. Khabibullaev, S. N. Abdurakhmanova, M. A. Zaikovskaya, Kh. Kh. Mannanova, B. L. Oksengendler, M. S. Yunusov, “The ionization-enhanced defect production in dioped silicon”, Dokl. Akad. Nauk SSSR, 299:2 (1988), 358–362
Citation in format AMSBIB
\Bibitem{KhaAbdZai88}
\by P.~Kh.~Khabibullaev, S.~N.~Abdurakhmanova, M.~A.~Zaikovskaya, Kh.~Kh.~Mannanova, B.~L.~Oksengendler, M.~S.~Yunusov
\paper The ionization-enhanced defect production in dioped silicon
\jour Dokl. Akad. Nauk SSSR
\yr 1988
\vol 299
\issue 2
\pages 358--362
\mathnet{http://mi.mathnet.ru/dan48228}
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