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Doklady Akademii Nauk, 1993, Volume 332, Number 5, Pages 575–577 (Mi dan49591)  
PHYSICS

Influence of $\mathrm{GaAs}$ surface structure before $\mathrm{Si}$ deposition on $\delta$-doping

V. G. Mokerov, B. K. Medvedev, I. N. Kotel’nikov, Yu. V. Fedorov

Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
Full-text PDF (297 kB)
Received: 21.06.1993
Document Type: Article
UDC: 538.971:621.793
Language: Russian
Citation: V. G. Mokerov, B. K. Medvedev, I. N. Kotel’nikov, Yu. V. Fedorov, “Influence of $\mathrm{GaAs}$ surface structure before $\mathrm{Si}$ deposition on $\delta$-doping”, Dokl. Akad. Nauk, 332:5 (1993), 575–577
Citation in format AMSBIB
\Bibitem{MokMedKot93}
\by V.~G.~Mokerov, B.~K.~Medvedev, I.~N.~Kotel’nikov, Yu.~V.~Fedorov
\paper Influence of $\mathrm{GaAs}$ surface structure before $\mathrm{Si}$ deposition on $\delta$-doping
\jour Dokl. Akad. Nauk
\yr 1993
\vol 332
\issue 5
\pages 575--577
\mathnet{http://mi.mathnet.ru/dan49591}
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