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Doklady Akademii Nauk, 1996, Volume 346, Number 5, Pages 616–618 (Mi dan50005)  
PHYSICS

Critical currents in composites HTSC + semiconductor at different concentrations of carriers

M. I. Petrov, D. A. Balaev, K. A. Shaykhutdinov, B. P. Khrustalev, K. S. Aleksandrov

L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
Full-text PDF (294 kB)
Received: 12.07.1995
Document Type: Article
UDC: 537.612.62
Language: Russian
Citation: M. I. Petrov, D. A. Balaev, K. A. Shaykhutdinov, B. P. Khrustalev, K. S. Aleksandrov, “Critical currents in composites HTSC + semiconductor at different concentrations of carriers”, Dokl. Akad. Nauk, 346:5 (1996), 616–618
Citation in format AMSBIB
\Bibitem{PetBalSha96}
\by M.~I.~Petrov, D.~A.~Balaev, K.~A.~Shaykhutdinov, B.~P.~Khrustalev, K.~S.~Aleksandrov
\paper Critical currents in composites HTSC + semiconductor at different concentrations of carriers
\jour Dokl. Akad. Nauk
\yr 1996
\vol 346
\issue 5
\pages 616--618
\mathnet{http://mi.mathnet.ru/dan50005}
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