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Fizika Tverdogo Tela, 2024, Volume 66, Issue 8, Pages 1325–1329 DOI: https://doi.org/10.61011/PSS.2024.08.59048.89
(Mi ftt10396)
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Semiconductors
Magnetoresistance on direct and alternating current in manganese selenide substituted with thulium
S. S. Aplesnin, A. M. Khar'kov, M. N. Sitnikov M. F. Reshetnev Siberian State University of Science and Technologies, Krasnoyarsk, Russia
DOI:
https://doi.org/10.61011/PSS.2024.08.59048.89
Abstract:
The scale of electrical inhomogeneity in manganese selenide substituted with thulium for magnetoresistance at direct and alternating current is investigated using I–V characteristics measured without a field and in a magnetic field in the paramagnetic phase. A correlation was found between the nonlinearity of the I–V characteristic and the magnetoresistance at direct current. A decrease in resistance in a magnetic field on alternating current was discovered with increasing concentration of thulium ions. The difference in magnetoresistance for direct and alternating current is explained by taking into account the contribution of dielectric constant in the magnetodielectric resonance model.
Keywords:
semiconductors, selenides, magnetoresistance, nonlinearity of the current-voltage characteristic.
Received: 12.04.2024 Revised: 12.04.2024 Accepted: 24.06.2024
Citation:
S. S. Aplesnin, A. M. Khar'kov, M. N. Sitnikov, “Magnetoresistance on direct and alternating current in manganese selenide substituted with thulium”, Fizika Tverdogo Tela, 66:8 (2024), 1325–1329
Linking options:
https://www.mathnet.ru/eng/ftt10396 https://www.mathnet.ru/eng/ftt/v66/i8/p1325
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