Features of the energy band structure of the InAsSbP epilayer deposited on a surface of the InAs$_{1-y}$Sb$_y$ solid solution

The photoluminescence spectra of narrow-gap InAs/InAsSbP/InAs$_{0.95}$Sb$_{0.05}$/InAsSbP heterostructures obtained by vapor-phase epitaxy from organometallic compounds on an InAs substrate were studied in a wide temperature range $T$ = 4–300 K. The influence of the composition and structure of the matrix surface enriched with antimonide-arsenides on the composition and luminescent properties of the InAs$_{1-x-y}$Sb$_y$P$_x$ epitaxial layer during its deposition by the MOVPE method was revealed. The ratio between the concentrations in the solid phase of narrow-gap and wide-gap compounds that form a quaternary solid solution affects the effective energy of location for charge carrier localization centers in the band gap of a quaternary solid solution.