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Fizika Tverdogo Tela, 2022, Volume 64, Issue 10, Pages 1369–1372
DOI: https://doi.org/10.21883/FTT.2022.10.53075.35HH (Mi ftt11142) 		 
XXVI International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 14 - March 17, 2022
Superconductivity

Superconducting thin films and tunnel junctions based on aluminum

M. A. Tarasova, A. M. Chekushkina, M. Yu. Fominskiia, D. M. Zakharovb, A. A. Lomovb, O. V. Devitskycd, A. A. Gunbinae, E. T. Sohinafg, V. S. Edel'mang

a Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow, Russia
b Valiev Institute of Physics and Technology of Russian Academy of Sciences, Moscow, Russia
c Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
d North-Caucasian Federal University, Stavropol, Russia
e Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, Russia
f National Research University Higher School of Economics, Moscow, Russia
g P. L. Kapitza Institute for Physical Problems, Russian Academy of Sciences, Moscow, Russia
Full-text PDF (258 kB)
DOI: https://doi.org/10.21883/FTT.2022.10.53075.35HH
Abstract: The features of conductivity in aluminum films produced by various methods are described depending on the presence of impurities, film thickness, and deposition conditions. The results of measuring the surface properties and crystal structure of fabricated films of aluminum, aluminum oxide, and aluminum nitride by X-ray diffraction and atomic force microscopy are presented. SIS, SIN, NIN junctions based on aluminum were fabricated using both shadow evaporation and magnetron sputtering. The current-voltage characteristics were measured. The prospects for improving the characteristics of aluminum SIS junctions, SQUID amplifiers, and SINIS detectors operating at temperatures of about 100 mK are discussed.
Keywords: aluminum thin films, surface roughness, atomically smooth films, tunnel junctions.
Funding agency Grant number
Russian Science Foundation 21-42-04421
Ministry of Science and Higher Education of the Russian Federation 075-15-2021-667
0030-2021-0005
The work on the experimental study of the samples was carried out at Kotelnikov Institute of Radio Engineering and Electronics of RAS with the financial support of the RSF No. 21-42-04421. For the manufacture of samples, the equipment of Unique Scientific Facility № 352529 “Cryointegral” was used, the development of which was supported by a grant from the Ministry of Science and Higher Education of the Russian Federation, agreement No. 075-15-2021-667. X-ray diffraction experiments were performed at NUST “MISIS” at the Department of Physical Materials Science using the equipment of the Center for X-Ray Diffraction Studies and Diagnostics of Materials. The work of A.A. Gunbina on the development of the topology for the samples was carried out at the IAP RAS with the support of the IAP RAS State Assignment No. 0030-2021-0005.
Received: 29.04.2022
Revised: 29.04.2022
Accepted: 12.05.2022
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. A. Tarasov, A. M. Chekushkin, M. Yu. Fominskii, D. M. Zakharov, A. A. Lomov, O. V. Devitsky, A. A. Gunbina, E. T. Sohina, V. S. Edel'man, “Superconducting thin films and tunnel junctions based on aluminum”, Fizika Tverdogo Tela, 64:10 (2022), 1369–1372
Citation in format AMSBIB
\Bibitem{TarCheFom22}
\by M.~A.~Tarasov, A.~M.~Chekushkin, M.~Yu.~Fominskii, D.~M.~Zakharov, A.~A.~Lomov, O.~V.~Devitsky, A.~A.~Gunbina, E.~T.~Sohina, V.~S.~Edel'man
\paper Superconducting thin films and tunnel junctions based on aluminum
\jour Fizika Tverdogo Tela
\yr 2022
\vol 64
\issue 10
\pages 1369--1372
\mathnet{http://mi.mathnet.ru/ftt11142}
\elib{https://elibrary.ru/item.asp?id=49375242}
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