Positron spectroscopy of defects in submicrocrystalline nickel after low-temperature annealing

Using the method of measuring the positron lifetime spectra and Doppler broadening annihilation line spectroscopy, the annealing of defects in submicrocrystalline nickel produced by equal channel angular pressing has been studied. In as-prepared samples, the positrons are trapped by dislocation defects and vacancy complexes inside crystallites. The size of vacancy complexes decreases with increasing annealing temperature in the interval $\Delta T$ = 20–300$^\circ$C. However, at $T$ = 360$^\circ$C, the complexes start growing again. The dependence of $S$-parameter on $W$-parameter derived from the Doppler broadening spectroscopy has two parts with different inclinations to axes that correspond to different types of primary centers of positron trapping in submicrocrystalline nickel. It has been elucidated that, at recovery stage in the temperature interval $\Delta T$ = 20–180$^\circ$C, the main centers of positron trapping are low-angle boundaries enriched by impurities, while at in situ recrystallization stage in the temperature interval $\Delta T$ = 180–360$^\circ$C, the primary centers of positron trapping are low-angle boundaries.