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This article is cited in 14 scientific papers (total in 14 papers)
Magnetism
Ferromagnetism and microwave magnetoresistance of GaMnSb films
A. D. Talantseva, O. V. Koplaka, R. B. Morgunovab a Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
b Moscow State Humanitarian University named after M. A. Sholokhov
Abstract:
The influence of the concentration of holes on the ferromagnetism of MnSb clusters in GaMnSb films has been revealed. It has been found that the high concentration of holes leads to their tunneling through the Schottky barrier at the cluster-crystal lattice interface and to a change in the magnetization of clusters. The microwave resistance of the films depends on the spin polarization of holes, which is controlled by the magnetization of clusters and the external magnetic field. The parameters of the crystalline anisotropy of ferromagnetic clusters and the dipole-dipole interaction between them have been determined.
Received: 25.08.2014
Citation:
A. D. Talantsev, O. V. Koplak, R. B. Morgunov, “Ferromagnetism and microwave magnetoresistance of GaMnSb films”, Fizika Tverdogo Tela, 57:2 (2015), 307–315; Phys. Solid State, 57:2 (2015), 322–330
Linking options:
https://www.mathnet.ru/eng/ftt11299 https://www.mathnet.ru/eng/ftt/v57/i2/p307
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