|
This article is cited in 3 scientific papers (total in 3 papers)
Low dimensional systems
Photoluminescence spectra of thin ZnO films grown by ALD technology
I. Kh. Akopyana, V. Yu. Davydovb, M. È. Labzovskayaa, A. A. Lisachenkoa, Ya. A. Mogunova, D. V. Nazarovc, B. V. Novikova, A. I. Romanychevc, A. Yu. Serova, A. N. Smirnovb, V. V. Titova, N. G. Filosofova a Saint Petersburg State University
b Ioffe Institute, St. Petersburg
c Institute of Chemistry, St. Petersburg State University
Abstract:
The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic orientations of substrates have been studied in a wide temperature range at different excitation levels. A model describing the origin of the new band has been proposed.
Received: 16.04.2015
Citation:
I. Kh. Akopyan, V. Yu. Davydov, M. È. Labzovskaya, A. A. Lisachenko, Ya. A. Mogunov, D. V. Nazarov, B. V. Novikov, A. I. Romanychev, A. Yu. Serov, A. N. Smirnov, V. V. Titov, N. G. Filosofov, “Photoluminescence spectra of thin ZnO films grown by ALD technology”, Fizika Tverdogo Tela, 57:9 (2015), 1817–1821; Phys. Solid State, 57:9 (2015), 1865–1869
Linking options:
https://www.mathnet.ru/eng/ftt11638 https://www.mathnet.ru/eng/ftt/v57/i9/p1817
|
|