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Surface physics, thin films
Low-frequency impedance in thin films near the metal-semiconductor phase transition
M. E. Kompana, V. A. Klimova, S. E. Nikitina, F. M. Kompanb, V. G. Goffmanc, E. I. Terukova a Ioffe Institute, St. Petersburg
b Vakris Ltd., St. Petersburg, 195256, Russia
c Yuri Gagarin State Technical University of Saratov
Abstract:
The impedance of thin VO$_2$ films at temperatures near the metal-semiconductor phase transition has been studied. It has been found that, in the low-temperature region, there is an abrupt change in the impedance. It has been demonstrated that the nature of this phenomenon is connected with thermoinertial processes in the film. From the experimental data, the heat conductivity of the film/substrate transition layer has been evaluated.
Received: 08.04.2015
Citation:
M. E. Kompan, V. A. Klimov, S. E. Nikitin, F. M. Kompan, V. G. Goffman, E. I. Terukov, “Low-frequency impedance in thin films near the metal-semiconductor phase transition”, Fizika Tverdogo Tela, 57:9 (2015), 1859–1862; Phys. Solid State, 57:9 (2015), 1908–1911
Linking options:
https://www.mathnet.ru/eng/ftt11644 https://www.mathnet.ru/eng/ftt/v57/i9/p1859
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