Isothermal relaxation of current in doped Bi$_{12}$SiO$_{20}$ : Ge sillenite single crystals

This paper presents the results of studying transient isothermal currents in germanium-doped Bi$_{12}$SiO$_{20}$ : Ge bismuth silicate single crystals at different stresses and temperatures. It has been found that electronic processes caused by the accumulation of considerable charges occur in the samples under investigation in a dc electric field. The relaxation of current at different temperatures corresponds to the mechanism of charge transfer formed at the energy level in the band gap. The microscopic parameters of the crystals characterizing the processes that occur in the material under investigation, in particular, the activation energy of the local level and the frequency factor, have been determined.