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This article is cited in 5 scientific papers (total in 5 papers)
Semiconductors
Electrical resistivity and Hall effect in lanthanum monobismuthide in magnetic fields to 13 T
N. N. Stepanova, N. V. Morozovab, A. E. Kar'kinb, A. V. Golubkova, V. V. Kaminskiia a Ioffe Institute, St. Petersburg
b Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg
Abstract:
The electrical resistivity, the Hall effect, the free charge carrier mobility, and their field dependences have been studied in lanthanum monobismuthide (LaBi) over the temperature range of 1.7–300 K in magnetic fields to 13 T. For comparison, similar measurements have been performed on samples of lanthanum monotelluride (LaTe). It has been shown that LaBi is a semiconducting material with a complex structure of the conduction band.
Received: 14.05.2015
Citation:
N. N. Stepanov, N. V. Morozova, A. E. Kar'kin, A. V. Golubkov, V. V. Kaminskii, “Electrical resistivity and Hall effect in lanthanum monobismuthide in magnetic fields to 13 T”, Fizika Tverdogo Tela, 57:12 (2015), 2300–2303; Phys. Solid State, 57:12 (2015), 2369–2372
Linking options:
https://www.mathnet.ru/eng/ftt11717 https://www.mathnet.ru/eng/ftt/v57/i12/p2300
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