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This article is cited in 10 scientific papers (total in 10 papers)
Surface physics, thin films
Structure and electron transport of strontium iridate epitaxial films
Yu. V. Kislinskiiab, G. A. Ovsyannikovac, A. M. Petrzhika, K. I. Constantiniana, N. V. Andreevd, T. A. Sviridovad a Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow
b Institute of Cristallography Russian Academy of Sciences, Moscow
c Chalmers University of Technology,
Gothenburg, Sweden
d National University of Science and Technology «MISIS», Moscow
Abstract:
The crystallographic and electrophysical properties of epitaxial SrTiO$_3$ films, in which the crystal lattice is deformed due to the mismatch between the lattice parameters of strontium iridate and the substrate, have been studied. Substrates (001) SrTiO$_3$, (001) LaAlO$_3$ + Sr$_2$AlTaO$_6$ (LSAT), (110) NdGaO$_3$, and (001) LaAlO$_3$ have been used. As a result of the deformation of the crystal lattice, the electrical resistivities of the films deposited on substrates with different lattice parameters differ by several times. The SrTiO$_3$ films with thickness $d$ = 90 nm, grown on SrTiO$_3$ and LSAT substrates, have a nonmonotonic temperature dependence of the conductivity: type of the temperature dependence of the conductivity changes from metallic to dielectric at $T_L$ = 200–250 K. The electrical resistance of the films with thicknesses less than 20 nm on all the substrates decreases exponentially with increasing temperature.
Received: 12.05.2015
Citation:
Yu. V. Kislinskii, G. A. Ovsyannikov, A. M. Petrzhik, K. I. Constantinian, N. V. Andreev, T. A. Sviridova, “Structure and electron transport of strontium iridate epitaxial films”, Fizika Tverdogo Tela, 57:12 (2015), 2446–2450; Phys. Solid State, 57:12 (2015), 2519–2523
Linking options:
https://www.mathnet.ru/eng/ftt11740 https://www.mathnet.ru/eng/ftt/v57/i12/p2446
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