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Fizika Tverdogo Tela, 2014, Volume 56, Issue 2, Pages 209–223 (Mi ftt11880)  
This article is cited in 125 scientific papers (total in 125 papers)

Reviews

Electronic structure of silicon dioxide (a review)

S. S. Nekrashevich, V. A. Gritsenko

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (2091 kB) Citations (125)
Abstract: Silicon dioxide amorphous films are the key insulators in silicon integrated circuits. The physical properties of silicon dioxide are determined by the electronic structure of this material. The currently available information on the electronic structure of silicon dioxide has been systematized.
Received: 03.07.2013
English version:
Physics of the Solid State, 2014, Volume 56, Issue 2, Pages 207–222
DOI: https://doi.org/10.1134/S106378341402022X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. S. Nekrashevich, V. A. Gritsenko, “Electronic structure of silicon dioxide (a review)”, Fizika Tverdogo Tela, 56:2 (2014), 209–223; Phys. Solid State, 56:2 (2014), 207–222
Citation in format AMSBIB
\Bibitem{NekGri14}
\by S.~S.~Nekrashevich, V.~A.~Gritsenko
\paper Electronic structure of silicon dioxide (a review)
\jour Fizika Tverdogo Tela
\yr 2014
\vol 56
\issue 2
\pages 209--223
\mathnet{http://mi.mathnet.ru/ftt11880}
\elib{https://elibrary.ru/item.asp?id=21310839}
\transl
\jour Phys. Solid State
\yr 2014
\vol 56
\issue 2
\pages 207--222
\crossref{https://doi.org/10.1134/S106378341402022X}
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  • https://www.mathnet.ru/eng/ftt/v56/i2/p209
    • This publication is cited in the following 125 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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