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Fizika Tverdogo Tela, 2014, Volume 56, Issue 3, Pages 431–434 (Mi ftt11914)  
Semiconductors

Anisotropy of the EPR line shape of dislocation acceptor centers in semiconducting type Ic diamonds

S. N. Samsonenko

Donbas National Academy of Civil Engineering and Architecture
Full-text PDF (133 kB) English version article
Abstract: The shape anisotropy of the EPR lines of broken carbon bonds in a dislocation core with an edge component in natural semiconducting type Ic diamonds has been investigated. It has been found that electrically active acceptor centers are formed at dislocation steps, jogs, or kinks. The distance between the paramagnetic centers is determined.
Received: 22.07.2013
English version:
Physics of the Solid State, 2014, Volume 56, Issue 3, Pages 438–441
DOI: https://doi.org/10.1134/S1063783414030287
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. N. Samsonenko, “Anisotropy of the EPR line shape of dislocation acceptor centers in semiconducting type Ic diamonds”, Fizika Tverdogo Tela, 56:3 (2014), 431–434; Phys. Solid State, 56:3 (2014), 438–441
Citation in format AMSBIB
\Bibitem{Sam14}
\by S.~N.~Samsonenko
\paper Anisotropy of the EPR line shape of dislocation acceptor centers in semiconducting type Ic diamonds
\jour Fizika Tverdogo Tela
\yr 2014
\vol 56
\issue 3
\pages 431--434
\mathnet{http://mi.mathnet.ru/ftt11914}
\elib{https://elibrary.ru/item.asp?id=21310874}
\transl
\jour Phys. Solid State
\yr 2014
\vol 56
\issue 3
\pages 438--441
\crossref{https://doi.org/10.1134/S1063783414030287}
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