Surface states of charge carriers in epitaxial films of the topological insulator Bi$_2$Te$_3$

The galvanomagnetic properties of $p$-type bismuth telluride heteroepitaxial films grown by the hot wall epitaxy method on oriented muscovite mica substrates have been investigated. Quantum oscillations of the magnetoresistance associated with surface electronic states in three-dimensional topological insulators have been studied in strong magnetic fields ranging from 6 to 14 T at low temperatures. The cyclotron effective mass, charge carrier mobility, and parameters of the Fermi surface have been determined based on the results of analyzing the magnetoresistance oscillations. The dependences of the cross-sectional area of the Fermi surface $S(k_{\mathrm{F}})$, the wave vector $k_{\mathrm{F}}$, and the surface concentration of charge carriers $n_s$ on the frequency of magnetoresistance oscillations in $p$-type Bi$_2$Te$_3$ heteroepitaxial films have been obtained. The experimentally observed shift of the Landau level index is consistent with the value of the Berry phase, which is characteristic of topological surface states of Dirac fermions in the films. The properties of topological surface states of charge carriers in p-type Bi$_2$Te$_3$ films obtained by analyzing the magnetoresistance oscillations significantly expand fields of practical application and stimulate the investigation of transport properties of chalcogenide films.