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This article is cited in 3 scientific papers (total in 3 papers)
Surface physics, thin films
Epitaxial growth of MnGa/GaAs layers for diodes with spin injection
M. V. Dorokhina, D. A. Pavlovb, A. I. Bobrovb, Yu. A. Danilova, P. B. Deminaa, B. N. Zvonkova, A. V. Zdoroveyshcheva, A. V. Kudrinb, N. V. Malekhonovab, E. I. Malyshevaa a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Abstract:
The possibility of the epitaxial growth of ferromagnetic manganese gallide (Mn$_3$Ga$_5$) layers on a the GaAs(100) surface was demonstrated. The ferromagnetic properties of epitaxial Mn$_3$Ga$_5$ at room temperature were evaluated from measurements of the anomalous Hall effect. A diode structure based on the Mn$_3$Ga$_5$/GaAs contact was formed, and the low-temperature electroluminescence of this diode was measured. The possibility of electroluminescence and the high crystal quality of the structures under study showed promises of their application in light-emitting diodes with spin injection.
Received: 21.04.2014
Citation:
M. V. Dorokhin, D. A. Pavlov, A. I. Bobrov, Yu. A. Danilov, P. B. Demina, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, N. V. Malekhonova, E. I. Malysheva, “Epitaxial growth of MnGa/GaAs layers for diodes with spin injection”, Fizika Tverdogo Tela, 56:10 (2014), 2062–2065; Phys. Solid State, 56:10 (2014), 2131–2134
Linking options:
https://www.mathnet.ru/eng/ftt12176 https://www.mathnet.ru/eng/ftt/v56/i10/p2062
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