Effect of injection depletion in $p$–$n$ heterostructures based on solid solutions (Si$_2$)$_{1-x-y}$(Ge$_2$)$_x$(GaAs)$_y$, (Si$_2$)$_{1-x}$(CdS)$_x$, (InSb)$_{1-x}$(Sn$_2$)$_x$, and CdTe$_{1-x}$S$_x$

The current-voltage characteristics of $n$-Si–$p$-(Si$_2$)$_{1-x-y}$(Ge$_2$)$_x$(GaAs)$_y$ (0 $\le x\le$ 0.91, 0$\le y\le$ 0.94), $p$–Si-$n$-(Si$_2$)$_{1-x}$(CdS)$_x$ (0 $\le x\le$ 0.01), $n$-GaAs–$p$-(InSb)$_{1-x}$(Sn$_2$)$_x$ (0 $\le x\le$ 0.05), and $n$-CdS–$p$-CdTe heterostructures have been studied. It has been found that the current-voltage characteristics of these structures contain a portion of sublinear increase in the current with a voltage $V\approx V_0\exp(Jad)$. The concentrations of deep impurities responsible for the appearance of the sublinear portion of the current-voltage characteristic have been estimated. The experimental results have been explained based on the theory of the injection depletion effect.