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This article is cited in 21 scientific papers (total in 21 papers)
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Relaxation times and mean free paths of phonons in the boundary scattering regime for silicon single crystals
I. I. Kuleyeva, I. G. Kuleyeva, S. M. Bakhareva, A. V. Inyushkinb a Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg
b National Research Centre "Kurchatov Institute", Moscow
Abstract:
The phonon focusing in cubic dielectric crystals and its influence on the heat transfer in the boundary phonon scattering regime at low temperatures have been investigated. The mean free paths of phonons of different polarizations in samples of infinite and finite lengths with circular and square cross sections have been calculated in the anisotropic continuum model. For samples of infinite length with circular and square cross sections in the case of the equality of the cross-sectional areas, the angular dependences of the mean free paths normalized by the Casimir length almost completely coincide. It has been shown that the anisotropy of the mean free paths decreases significantly upon changing over from infinite samples to samples of finite length. For silicon crystals, the anisotropy of the phonon mean free paths has been analyzed for each of the branches of the phonon spectrum. It has been found that the mean free paths for phonons of each vibrational mode reach maximum values in the directions of focusing, and, in these directions, they exceed the mean free paths for phonons of the other vibrational modes.
Received: 29.02.2012 Accepted: 15.06.2012
Citation:
I. I. Kuleyev, I. G. Kuleyev, S. M. Bakharev, A. V. Inyushkin, “Relaxation times and mean free paths of phonons in the boundary scattering regime for silicon single crystals”, Fizika Tverdogo Tela, 55:1 (2013), 24–35; Phys. Solid State, 55:1 (2013), 31–44
Linking options:
https://www.mathnet.ru/eng/ftt12274 https://www.mathnet.ru/eng/ftt/v55/i1/p24
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