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This article is cited in 3 scientific papers (total in 3 papers)
Dielectrics
Effect of dopant Cr ions on the dielectric properties of melt-grown ZnSe crystals
O. N. Chugaia, A. S. Gerasimenkob, V. K. Komar'b, D. P. Nalivaikob, S. V. Oleinika, O. V. Podshivalovaa, S. V. Sulimab, T. N. Novokhatskayaa a National Aerospace University "Kharkiv Aviation Institute"
b Institute for Single Crystals, National Academy of Sciences of Ukraine, Kharkov
Abstract:
The frequency and temperature dependences of the real and imaginary parts of the permittivity of Cr-doped ($n_{\mathrm{Cr}}\simeq$ 10$^{18}$ cm$^{-3}$) melt-grown ZnSe crystals have been measured in the low-frequency region. It has been established that such doping reduces the heterogeneity of the dielectric properties and the level of energy losses of ac electric field in a crystalline ingot. The effect of dopant atoms on the dielectric properties has been explained as being caused by formation of defect associates with participation of these atoms and intrinsic crystal defects.
Received: 05.06.2012
Citation:
O. N. Chugai, A. S. Gerasimenko, V. K. Komar', D. P. Nalivaiko, S. V. Oleinik, O. V. Podshivalova, S. V. Sulima, T. N. Novokhatskaya, “Effect of dopant Cr ions on the dielectric properties of melt-grown ZnSe crystals”, Fizika Tverdogo Tela, 55:1 (2013), 50–52; Phys. Solid State, 55:1 (2013), 60–63
Linking options:
https://www.mathnet.ru/eng/ftt12277 https://www.mathnet.ru/eng/ftt/v55/i1/p50
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