Dielectric properties of porous aluminum and silicon oxides with inclusions of triglycine sulfate and its modified analogs

This paper reports on an investigation of the temperature dependences of the capacitance and conductance of composite materials prepared by incorporating the ferroelectric TGS and its analogs–TGS with addition of $L$, $\alpha$-alanine and chromium–into porous Al$_2$O$_3$ and SiO$_2$ matrices. It has been established that conduction of the structures under study involves charge transport predominantly through the ferroelectric embedded in the porous matrix. A mechanism is proposed to account for the displacement of the phase transition temperature of the ferroelectric inclusion under “restricted geometry” conditions, which is driven by the difference between the thermal expansion coefficients of the porous matrix and the embedded ferroelectric.