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Fizika Tverdogo Tela, 2013, Volume 55, Issue 3, Pages 602–609 (Mi ftt12368)  
This article is cited in 3 scientific papers (total in 3 papers)

Surface physics, thin films

Tunneling characteristics of a double-barrier magnetic junction

N. Kh. Useinov

Kazan (Volga Region) Federal University
Full-text PDF (251 kB) Citations (3)
Abstract: The spin-polarized current through a planar double-barrier magnetic tunnel junction has been calculated using the quasi-classical model. The coefficients of electron transmission through the barriers have been calculated in terms of the quantum theory. The dependences of the transmission coefficients, spinpolarized currents, and tunneling magnetoresistance on the applied voltage under resonant conditions have been shown. Under non-resonant conditions, the tunneling magnetoresistance has been compared with the experimental data.
Received: 07.08.2012
English version:
Physics of the Solid State, 2013, Volume 55, Issue 3, Pages 659–667
DOI: https://doi.org/10.1134/S1063783413030281
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. Kh. Useinov, “Tunneling characteristics of a double-barrier magnetic junction”, Fizika Tverdogo Tela, 55:3 (2013), 602–609; Phys. Solid State, 55:3 (2013), 659–667
Citation in format AMSBIB
\Bibitem{Use13}
\by N.~Kh.~Useinov
\paper Tunneling characteristics of a double-barrier magnetic junction
\jour Fizika Tverdogo Tela
\yr 2013
\vol 55
\issue 3
\pages 602--609
\mathnet{http://mi.mathnet.ru/ftt12368}
\elib{https://elibrary.ru/item.asp?id=20322796}
\transl
\jour Phys. Solid State
\yr 2013
\vol 55
\issue 3
\pages 659--667
\crossref{https://doi.org/10.1134/S1063783413030281}
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  • https://www.mathnet.ru/eng/ftt/v55/i3/p602
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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