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Semiconductors
Growth specifics of GaAs nanowires in mesa
I. P. Sotnikovabc, V. A. Petrova, G. È. Cirlinabc, Yu. B. Samsonenkoabc, A. D. Bouravlevab, Yu. M. Zadiranovb, N. D. Il'inskayab, S. I. Troshkovb a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Ioffe Institute, St. Petersburg
c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
Abstract:
The possibility of epitaxial growth of nanowire arrays on tilted faces of linear mesa has been demonstrated. The structural properties of GaAs nanowires grown on $(33\bar 1)$, $(11\bar 7)$, and (113) faces of samples with the (100) crystallographic orientation of the substrate have been studied. It has been found that there is a relation between the structural parameters of nanowires and the geometric orientation of the growth surface relative to the $\langle$111$\rangle$ directions and the surface of the substrate.
Received: 27.09.2012
Citation:
I. P. Sotnikov, V. A. Petrov, G. È. Cirlin, Yu. B. Samsonenko, A. D. Bouravlev, Yu. M. Zadiranov, N. D. Il'inskaya, S. I. Troshkov, “Growth specifics of GaAs nanowires in mesa”, Fizika Tverdogo Tela, 55:4 (2013), 645–649; Phys. Solid State, 55:4 (2013), 702–706
Linking options:
https://www.mathnet.ru/eng/ftt12375 https://www.mathnet.ru/eng/ftt/v55/i4/p645
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