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Fizika Tverdogo Tela, 2013, Volume 55, Issue 4, Pages 645–649 (Mi ftt12375)  

Semiconductors

Growth specifics of GaAs nanowires in mesa

I. P. Sotnikovabc, V. A. Petrova, G. È. Cirlinabc, Yu. B. Samsonenkoabc, A. D. Bouravlevab, Yu. M. Zadiranovb, N. D. Il'inskayab, S. I. Troshkovb

a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Ioffe Institute, St. Petersburg
c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
Abstract: The possibility of epitaxial growth of nanowire arrays on tilted faces of linear mesa has been demonstrated. The structural properties of GaAs nanowires grown on $(33\bar 1)$, $(11\bar 7)$, and (113) faces of samples with the (100) crystallographic orientation of the substrate have been studied. It has been found that there is a relation between the structural parameters of nanowires and the geometric orientation of the growth surface relative to the $\langle$111$\rangle$ directions and the surface of the substrate.
Received: 27.09.2012
English version:
Physics of the Solid State, 2013, Volume 55, Issue 4, Pages 702–706
DOI: https://doi.org/10.1134/S106378341304029X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. P. Sotnikov, V. A. Petrov, G. È. Cirlin, Yu. B. Samsonenko, A. D. Bouravlev, Yu. M. Zadiranov, N. D. Il'inskaya, S. I. Troshkov, “Growth specifics of GaAs nanowires in mesa”, Fizika Tverdogo Tela, 55:4 (2013), 645–649; Phys. Solid State, 55:4 (2013), 702–706
Citation in format AMSBIB
\Bibitem{SotPetCir13}
\by I.~P.~Sotnikov, V.~A.~Petrov, G.~\`E.~Cirlin, Yu.~B.~Samsonenko, A.~D.~Bouravlev, Yu.~M.~Zadiranov, N.~D.~Il'inskaya, S.~I.~Troshkov
\paper Growth specifics of GaAs nanowires in mesa
\jour Fizika Tverdogo Tela
\yr 2013
\vol 55
\issue 4
\pages 645--649
\mathnet{http://mi.mathnet.ru/ftt12375}
\elib{https://elibrary.ru/item.asp?id=20322803}
\transl
\jour Phys. Solid State
\yr 2013
\vol 55
\issue 4
\pages 702--706
\crossref{https://doi.org/10.1134/S106378341304029X}
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