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Fizika Tverdogo Tela, 2013, Volume 55, Issue 6, Pages 1071–1073 (Mi ftt12444)  
This article is cited in 4 scientific papers (total in 4 papers)

Semiconductors

Getter formation in silicon by implantation of antimony ions

P. K. Sadovskiia, A. R. Chelyadinskiia, V. B. Odzaeva, M. I. Tarasika, A. S. Turtsevichb, Yu. B. Vasil'evb

a Belarusian State University, Minsk
b JSC “INTEGRAL”
Full-text PDF (1096 kB) Citations (4)
Abstract: A porous silicon layer as a getter of uncontrolled impurities has been prepared by implantation of Sb$^+$ into silicon and subsequent thermal treatments. The lifetime of nonequilibrium charge carriers in $n$- and $p$-type silicon wafers with a getter layer is 3–4 times longer than that without a getter.
Received: 06.12.2012
English version:
Physics of the Solid State, 2013, Volume 55, Issue 6, Pages 1156–1158
DOI: https://doi.org/10.1134/S1063783413060292
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. K. Sadovskii, A. R. Chelyadinskii, V. B. Odzaev, M. I. Tarasik, A. S. Turtsevich, Yu. B. Vasil'ev, “Getter formation in silicon by implantation of antimony ions”, Fizika Tverdogo Tela, 55:6 (2013), 1071–1073; Phys. Solid State, 55:6 (2013), 1156–1158
Citation in format AMSBIB
\Bibitem{SadCheOdz13}
\by P.~K.~Sadovskii, A.~R.~Chelyadinskii, V.~B.~Odzaev, M.~I.~Tarasik, A.~S.~Turtsevich, Yu.~B.~Vasil'ev
\paper Getter formation in silicon by implantation of antimony ions
\jour Fizika Tverdogo Tela
\yr 2013
\vol 55
\issue 6
\pages 1071--1073
\mathnet{http://mi.mathnet.ru/ftt12444}
\elib{https://elibrary.ru/item.asp?id=20322872}
\transl
\jour Phys. Solid State
\yr 2013
\vol 55
\issue 6
\pages 1156--1158
\crossref{https://doi.org/10.1134/S1063783413060292}
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  • https://www.mathnet.ru/eng/ftt/v55/i6/p1071
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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