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This article is cited in 13 scientific papers (total in 13 papers)
Semiconductors
Resonance Bragg structure with double InGaN quantum wells
A. S. Bolshakov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, V. V. Lundin, A. F. Tsatsul'nikov, M. A. Yagovkina Ioffe Institute, St. Petersburg
Abstract:
The effect of exciton-polariton resonance on the optical properties of periodic heterostructures with double InGaN quantum wells in a GaN matrix has been studied. It has been found that the light reflection is amplified at the frequency corresponding to the exciton energy when it coincides with the frequency of the Bragg resonance. This effect is observed to be twice as large as that in a similar system of single quantum wells.
Received: 18.02.2013
Citation:
A. S. Bolshakov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, V. V. Lundin, A. F. Tsatsul'nikov, M. A. Yagovkina, “Resonance Bragg structure with double InGaN quantum wells”, Fizika Tverdogo Tela, 55:9 (2013), 1706–1708; Phys. Solid State, 55:9 (2013), 1817–1820
Linking options:
https://www.mathnet.ru/eng/ftt12535 https://www.mathnet.ru/eng/ftt/v55/i9/p1706
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