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This article is cited in 3 scientific papers (total in 3 papers)
Lattice dynamics
Role of adhesion in the metal-semiconductor phase transition in polycrystalline vanadium dioxide films
V. N. Andreev, V. A. Klimov, M. E. Kompan Ioffe Institute, St. Petersburg
Abstract:
Etching of thin polycrystalline films of vanadium dioxide with hydrofluoric acid vapor has offered a possibility to reveal a significant influence of the extent of adhesion on the temperature position and shape of the hysteresis loop of the reflectivity. It has been established that, in the cases where silicon is used as a substrate, etching at room temperature is accompanied by incorporation of hydrogen into thin films of vanadium dioxide.
Received: 21.03.2013
Citation:
V. N. Andreev, V. A. Klimov, M. E. Kompan, “Role of adhesion in the metal-semiconductor phase transition in polycrystalline vanadium dioxide films”, Fizika Tverdogo Tela, 55:10 (2013), 1982–1986; Phys. Solid State, 55:10 (2013), 2097–2101
Linking options:
https://www.mathnet.ru/eng/ftt12580 https://www.mathnet.ru/eng/ftt/v55/i10/p1982
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