X-ray diffraction studies of heterostructures based on solid solutions Al$_x$Ga$_{1-x}$As$_y$P$_{1-y}$ : Si

The growth of MOCVD-hydride epitaxial heterostructures based on ternary solid solutions Al$_x$Ga$_{1-x}$As heavily doped with phosphorus and silicon has been studied using high-resolution X-ray diffraction and X-ray microanalysis. The prepared epitaxial films are five-component solid solutions (As$_x$Ga$_{1-x}$As$_y$P$_{1-y}$)$_{1-z}$Si$_z$.