Photoluminescence properties of heavily doped heterostructures based on (Al$_x$Ga$_{1-x}$As)$_{1-y}$Si$_y$ solid solutions

It has been established that the photoluminescence spectra of heavily doped heterostructures based on (Al$_x$Ga$_{1-x}$As)$_{1-y}$Si$_y$ solid solutions exhibit quenching of the main exciton bands of Al$_x$Ga$_{1-x}$As ternary solid solutions and appearance of other maxima. The quenching of the main exciton bands can be associated both with the DX-center formation and with the change in the character of the band structure of (Al$_x$Ga$_{1-x}$As)$_{1-y}$Si$_y$ quaternary solid solutions.