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Fizika Tverdogo Tela, 2013, Volume 55, Issue 11, Pages 2123–2127 (Mi ftt12604)  
This article is cited in 22 scientific papers (total in 22 papers)

Semiconductors

Kinetic properties of TiN thin films prepared by reactive magnetron sputtering

M. N. Solovana, V. V. Brusab, P. D. Mar'yanchuka, T. T. Kovaliuka, J. Rappichb, M. Glubab

a Chernivtsi National University named after Yuriy Fedkovych
b Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany
Full-text PDF (625 kB) Citations (22)
Abstract: Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron sputtering are presented. It is established that the TiN thin films are polycrystalline and possess semiconductor $n$-type conduction. The carrier concentration is $\sim$10$^{22}$ cm$^{-3}$, while electron scattering occurs at ionized titanium atoms.
Received: 23.04.2013
English version:
Physics of the Solid State, 2013, Volume 55, Issue 11, Pages 2234–2238
DOI: https://doi.org/10.1134/S1063783413110255
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. N. Solovan, V. V. Brus, P. D. Mar'yanchuk, T. T. Kovaliuk, J. Rappich, M. Gluba, “Kinetic properties of TiN thin films prepared by reactive magnetron sputtering”, Fizika Tverdogo Tela, 55:11 (2013), 2123–2127; Phys. Solid State, 55:11 (2013), 2234–2238
Citation in format AMSBIB
\Bibitem{SolBruMar13}
\by M.~N.~Solovan, V.~V.~Brus, P.~D.~Mar'yanchuk, T.~T.~Kovaliuk, J.~Rappich, M.~Gluba
\paper Kinetic properties of TiN thin films prepared by reactive magnetron sputtering
\jour Fizika Tverdogo Tela
\yr 2013
\vol 55
\issue 11
\pages 2123--2127
\mathnet{http://mi.mathnet.ru/ftt12604}
\elib{https://elibrary.ru/item.asp?id=20323032}
\transl
\jour Phys. Solid State
\yr 2013
\vol 55
\issue 11
\pages 2234--2238
\crossref{https://doi.org/10.1134/S1063783413110255}
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    • This publication is cited in the following 22 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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