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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductors
Effects of spatial dispersion at intraband transitions in multiple quantum well structures
L. E. Golub, F. V. Porubaev Ioffe Institute, St. Petersburg
Abstract:
Effects of spatial dispersion in reflection of light from multiple quantum well structures of different symmetry have been investigated. It has been shown that with inclined incidence of linearly polarized light on the system of symmetry $C_{\infty v}$, the reflected wave starts to manifest the circular polarization. Upon the incidence of $s(p)$-polarized light on the structure of the $D_{2d}$ symmetry, the reflected wave starts to manifest $p(s)$ component, while in the case of the point symmetry $C_{2v}$, this phenomenon also occurs for the normal incidence. The magneto-spatial dispersion in the magnetic field lying in the structure plane leads to the same conversion of polarization. Dependences of the polarization-sensitive reflection coefficients on the incidence angle are calculated. The microscopically gyrotropic contributions to the dielectric permittivity of the multiple quantum well structures are calculated for the intraband frequency range. Evaluations show that the effects of spatial dispersion in such systems can be observed experimentally.
Received: 25.04.2013
Citation:
L. E. Golub, F. V. Porubaev, “Effects of spatial dispersion at intraband transitions in multiple quantum well structures”, Fizika Tverdogo Tela, 55:11 (2013), 2128–2134; Phys. Solid State, 55:11 (2013), 2239–2245
Linking options:
https://www.mathnet.ru/eng/ftt12605 https://www.mathnet.ru/eng/ftt/v55/i11/p2128
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