Fizika Tverdogo Tela
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika Tverdogo Tela:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika Tverdogo Tela, 2013, Volume 55, Issue 12, Pages 2423–2427 (Mi ftt12649)  

This article is cited in 4 scientific papers (total in 4 papers)

Impurity centers

Kinetics of silicon precipitation in a directionally crystallized binary aluminum–silicon alloy

L. M. Egorova, B. N. Korchunov, V. N. Osipov, V. A. Bershtein, S. P. Nikanorov

Ioffe Institute, St. Petersburg
Abstract: The precipitation of silicon atoms in aluminum in an Al–Si alloy has been studied using differential scanning calorimetry. The alloys containing 8, 13, and 15 wt% silicon were obtained by directional solidification of a ribbon pulled from the melt through a shaper by the Stepanov method at a rate of about 10$^3$ $\mu$m/s. From the characteristics of the exothermic effects observed in the temperature range 430–650 K, it has been found that the precipitation process leading to the formation of the Guinier–Preston zones occurs with the effective activation energy of 75 kJ/mol, and its intensity decreases with increasing silicon content in the alloy from 8 wt% to the eutectic content. The effect correlates with a decrease in the volume fraction of dendrites of the primary $\alpha$-Al crystals in the alloy. It can be assumed that the precipitation occurs in the dendrite primary crystals of the solid solution. Based on this assumption, it has been concluded that, during directional solidification of an aluminum-silicon alloy at a rate of 10$^3$ $\mu$m/s, the metastable solid solution of silicon in aluminum, in which silicon atoms of the metallic lattice are transformed into clusters with covalent bonding forces, is formed during the dendrite growth of the primary crystals.
Received: 10.06.2013
English version:
Physics of the Solid State, 2013, Volume 55, Issue 12, Pages 2549–2553
DOI: https://doi.org/10.1134/S1063783413120123
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. M. Egorova, B. N. Korchunov, V. N. Osipov, V. A. Bershtein, S. P. Nikanorov, “Kinetics of silicon precipitation in a directionally crystallized binary aluminum–silicon alloy”, Fizika Tverdogo Tela, 55:12 (2013), 2423–2427; Phys. Solid State, 55:12 (2013), 2549–2553
Citation in format AMSBIB
\Bibitem{EgoKorOsi13}
\by L.~M.~Egorova, B.~N.~Korchunov, V.~N.~Osipov, V.~A.~Bershtein, S.~P.~Nikanorov
\paper Kinetics of silicon precipitation in a directionally crystallized binary aluminum--silicon alloy
\jour Fizika Tverdogo Tela
\yr 2013
\vol 55
\issue 12
\pages 2423--2427
\mathnet{http://mi.mathnet.ru/ftt12649}
\elib{https://elibrary.ru/item.asp?id=20323077}
\transl
\jour Phys. Solid State
\yr 2013
\vol 55
\issue 12
\pages 2549--2553
\crossref{https://doi.org/10.1134/S1063783413120123}
Linking options:
  • https://www.mathnet.ru/eng/ftt12649
  • https://www.mathnet.ru/eng/ftt/v55/i12/p2423
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika Tverdogo Tela Fizika Tverdogo Tela
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025