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Fizika Tverdogo Tela, 1987, Volume 29, Issue 10, Pages 3072–3076 (Mi ftt1499)  
Electrically inactive fraction of the shallow impurity in silicon

M. I. Vasilevskii, V. A. Panteleev

Gor'kii State University named after N. I. Lobachevskogo
Full-text PDF (536 kB)
Received: 08.06.1987
Bibliographic databases:
Document Type: Article
UDC: 539.219.3
Language: Russian
Citation: M. I. Vasilevskii, V. A. Panteleev, “Electrically inactive fraction of the shallow impurity in silicon”, Fizika Tverdogo Tela, 29:10 (1987), 3072–3076
Citation in format AMSBIB
\Bibitem{VasPan87}
\by M.~I.~Vasilevskii, V.~A.~Panteleev
\paper Electrically inactive fraction of the shallow impurity in silicon
\jour Fizika Tverdogo Tela
\yr 1987
\vol 29
\issue 10
\pages 3072--3076
\mathnet{http://mi.mathnet.ru/ftt1499}
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  • https://www.mathnet.ru/eng/ftt/v29/i10/p3072
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