Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction

Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70$^\circ$C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds $\gamma$-Ag$_2$Al $\to$ $\mu$-Ag$_3$Al are successively formed. It is shown that the possibility of the formation of the $\mu$-Ag$_3$Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the $\mu$-Ag$_3$Al phase begins only after all fcc aluminum has reacted.