Effect of heat treatment on the structure and the thermoelectric properties of Sb$_{0.9}$Bi$_{1.1}$Te$_{2.9}$Se$_{0.1}$ thin films and composites based on them

This work considers the effect of vacuum annealing on the thermoelectric properties of Sb$_{0.9}$Bi$_{1.1}$Te$_{2.9}$Se$_{0.1}$ thin film and Sb$_{0.9}$Bi$_{1.1}$Te$_{2.9}$Se$_{0.1}$–С composites with various carbon contents produced by ion-beam deposition in an argon atmosphere. The electrical resistivity and the thermopower of Sb$_{0.9}$Bi$_{1.1}$Te$_{2.9}$Se$_{0.1}$–С nanocomposites are found to be dependent on not only the carbon concentration but also the type and the concentration of intrinsic point defects of the Sb$_{0.9}$Bi$_{1.1}$Te$_{2.9}$Se$_{0.1}$ solid solution, which determine the type of conductivity of Sb$_{0.9}$Bi$_{1.1}$Te$_{2.9}$Se$_{0.1}$ granules. The power factors are estimated for films of Sb$_{0.9}$Bi$_{1.1}$Te$_{2.9}$Se$_{0.1}$ solid solution and films of Sb$_{0.9}$Bi$_{1.1}$Te$_{2.9}$Se$_{0.1}$–С composites and found to have values comparable with the values for nanostructured materials on the basis of (Bi,Sb)$_{2}$(Te,Se)$_{3}$. solid solutions.