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Itogi Nauki i Tekhniki. Sovremennaya Matematika i ee Prilozheniya. Tematicheskie Obzory, 2019, Volume 172, Pages 104–112
DOI: https://doi.org/10.36535/0233-6723-2019-172-104-112 (Mi into549) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Comparative analysis of the matrix method and the finite-difference method for modeling the distribution of minority charge carriers in a multilayer planar semiconductor structure

E. V. Sereginaa, V. V. Kalmanovichb, M. A. Stepovichb

a Kaluga Branch of Bauman Moscow State Technical University
b Tsiolkovsky Kaluga State University
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DOI: https://doi.org/10.36535/0233-6723-2019-172-104-112
Abstract: The stationary differential heat and mass transfer equation with discontinuous coefficients describes various non-time-dependent physical processes, for example, the distribution of minority carriers from a stationary source in an inhomogeneous or multilayer structure. In this paper, we analyze the possibilities of applying the matrix method and the finite-difference method for modeling the distribution of minority charge carriers generated by kilovolt electrons in a multilayer semiconductor material. The efficiency of the matrix method for solving stationary differential equations with discontinuous coefficients is shown.
Keywords: mathematical model, differential equation, electron beam, semiconductor, multilayer planar structure, matrix method, finite-difference method.
Funding agency Grant number
Russian Foundation for Basic Research 19-03-00271
18-41-400001
This work was supported by the Russian Foundation for Basic Research (project No. 19-03-0300271) and the joint project of the Russian Foundation for Basic Research and the Government of the Kaluga Region No. 18–41-400001.
Document Type: Article
UDC: 517.927.2, 519.677
MSC: 34B05, 34B60, 65Z05, 80A20, 78A55
Language: Russian
Citation: E. V. Seregina, V. V. Kalmanovich, M. A. Stepovich, “Comparative analysis of the matrix method and the finite-difference method for modeling the distribution of minority charge carriers in a multilayer planar semiconductor structure”, Proceedings of the Voronezh Winter Mathematical School "Modern Methods of Function Theory and Related Problems." January 28 – February 2, 2019. Part 3, Itogi Nauki i Tekhniki. Sovrem. Mat. Pril. Temat. Obz., 172, VINITI, Moscow, 2019, 104–112
Citation in format AMSBIB
\Bibitem{SerKalSte19}
\by E.~V.~Seregina, V.~V.~Kalmanovich, M.~A.~Stepovich
\paper Comparative analysis of the matrix method and the finite-difference method for modeling the distribution of minority charge carriers in a multilayer planar semiconductor structure
\inbook Proceedings of the Voronezh Winter Mathematical School "Modern Methods of Function Theory and Related Problems." January 28 – February 2, 2019. Part 3
\serial Itogi Nauki i Tekhniki. Sovrem. Mat. Pril. Temat. Obz.
\yr 2019
\vol 172
\pages 104--112
\publ VINITI
\publaddr Moscow
\mathnet{http://mi.mathnet.ru/into549}
\crossref{https://doi.org/10.36535/0233-6723-2019-172-104-112}
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