Radiation-induced conductivity in silicon and silicon dioxide. Scattering rates

The scattering rates of the electron-phonon interaction have been calculated in silicon and dioxide of silicon. There are two main mechanism of the scattering of electrons: the elastic scattering associated with acoustic phonons and the non-elastic scattering associated with optical phonons. For comparison with previous results, there was calculated the dependence on energy of the scattering rate both in approximation of the parabolic band and with using of the density of states in the conductivity band. The scattering rate on the ionized impurities (in n-silicon) was calculated in the Konvel-Weiskopf approximation.