Synthesis of quantum-dimensional semiconductor particles with chemical and photochemical etching methods

The conditions of liquid chemical and photochemical etching of submicron powders of the following semiconductors: GaAs, InSb, Si were studied in this work. The analysis of particle size was carried out at various etching stages depending on the composition of the etching solutions, including the additional introduction of a stabilizer – cationic surfactant cetyltrimethylammonium bromide in order to estimate the etching rate and the size of the nanoparticles obtained. The rates of etching processes were determined; photoluminescence was obtained on colloidal nanosized semiconductor particles produced by this method, and its spectral composition was measured.