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Meždunarodnyj naučno-issledovatel'skij žurnal, 2015, , Issue 9-3(40), Pages 46–48 (Mi irj71)  
PHYSICS AND MATHEMATICS

Simulation of tunneling current in flash-memory cells

O. G. Zhevnyak

Belarusian State University, Minsk
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Abstract: In present paper the simulation of tunneling current in MOS-transistors is fulfilled. The flash-memory cells are constructed on the base of these transistors. By using simulation results the effects of gate and drain voltage as well as tunnel oxide thickness on tunnel current along the transistors channel are studied.
Keywords: flash-memory cell, electron tunneling, MOS-transistor, tunneling current.
Document Type: Article
Language: Russian
Citation: O. G. Zhevnyak, “Simulation of tunneling current in flash-memory cells”, Meždunar. nauč.-issled. žurn., 2015, no. 9-3(40), 46–48
Citation in format AMSBIB
\Bibitem{Zhe15}
\by O.~G.~Zhevnyak
\paper Simulation of tunneling current in flash-memory cells
\jour Me{\v z}dunar. nau{\v{c}}.-issled. {\v z}urn.
\yr 2015
\issue 9-3(40)
\pages 46--48
\mathnet{http://mi.mathnet.ru/irj71}
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