Heterophase semiconductors under action of irradiations

The history and current state of our heterophase photoconducting CdS-PbS films investigations are observed. Films were prepared by the vacuum evaporation method from the materials with limited mutual solubility. Reasons of increased degradation stability with respect to radiation (in particular y- and electronic irradiations) are found out. Degradation stability is explained by diversion of recombination flow from wide-gap phase to narrow-gap. Radiation stimulated defects also move to narrow-gap phase. Defect density decreasing in wide gap phase of semiconductor caused by diversion of recombination flow and radiation-stimulated diffusion leads to weakening of narrow gap phase crystal lattice. This results in secondary ion yield ($Pb^+$) increasing under ion bombardment and white light illumination. This phenomenon, called secondary-ion photoeffect, was observed and investigated for a first time. The possibility of nanotechnology application to creation of nano-sized inclusions in heterophase semiconductor is also considered.