Electron mobility in quantum wire with edge dislocation in external magnetic field

Background. Technology of quantum wire growing may be accompanied by occurrence of stacking fault and edge dislocations. The latter are very important in scattering of charge carriers at considerably low temperatures, and therefore, significantly influence transporting properties of quantum wires. In a longitudinal magnetic field there appear new opportunities for charge carriers mobility control in a quantum wire, which is important for applications in semiconductor nanoelectronics. The study aims at theoretical research of the influence of edge dislocation on electron mobility in a quantum wire in an external magnetic field, and also at comparison with influences of other mechanisms of scattering. Materials and methods. For quantum wires of InSb the authors built curves of dependency of relaxation time on kinetic energy directed to edge dislocation of an electron in a quantum wire in condition of an external magnetic field. For calculation of relaxation time the model of Bonch-Bruevich and Kogan as well as Born approximation were used. Mobility calculation was performed for a quantum wire made of GaAs. Results. It is shown that for the dependecy of relaxation time on kinetic energy directed to edge dislocation of an electron characteristic are the oscillations, the period of which in a longitudinal magnetic field decreases, and the value of relaxation time increases due to hybrid quantization. It is revealed that the considered mechanism of scattering may be significant in comparison with scattering on LA-phonons and on occasional irregularities of quantum wire boundary, with the temperature interval of its effectiveness being determined by the valueof probability of acceptor centers filling in a dislocation line. Conclusions. Charge state of a dislocation line may significantly influence the range of the temperature interval, at which electron scattering predominates on edge dislocation.