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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2010, Volume 92, Issue 5, Pages 390–393 (Mi jetpl1412)  
This article is cited in 3 scientific papers (total in 3 papers)

CONDENSED MATTER

Metallic Beta-Phase Silicon Nanowires: Structure and Electronic Properties

R. V. Sorokinab, P. V. Avramovbc, V. A. Deminb, L. A. Chernozatonskiia

a Emanuel Institute of Biochemical Physics RAS, Moscow, Russian
b Siberian Federal University, Krasnoyarsk, Russian
c Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki, Japan
Full-text PDF (435 kB) Citations (3)
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Abstract: Electronic band structure and energetic stability of two types of $<110>$ and $<001>$ oriented silicon nanowires in $\beta$-Sn phase with the surface terminated by hydrogen atoms were studied using density functional theory. It was found that $\beta$-Sn nanowires are metastable with zero band gap against to nanowires in diamond phase. The relative energy of the studied wires tends to the energy of the bulk silicon crystal in $\beta$-Sn phase.
Received: 26.07.2010
English version:
Journal of Experimental and Theoretical Physics Letters, 2010, Volume 92, Issue 5, Pages 352–355
DOI: https://doi.org/10.1134/S0021364010170170
Bibliographic databases:
Document Type: Article
Language: English
Citation: R. V. Sorokin, P. V. Avramov, V. A. Demin, L. A. Chernozatonskii, “Metallic Beta-Phase Silicon Nanowires: Structure and Electronic Properties”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:5 (2010), 390–393; JETP Letters, 92:5 (2010), 352–355
Citation in format AMSBIB
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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